Epitaxial Wafers on GaAs Substrate
QDLaser markets high-quality epitaxial wafers on GaAs substrates, grown by molecular beam epitaxy (MBE), for various photonic and electronic devices. These wafers can be customized to meet customers’ specific demands. The quantum dot wafers apply world-leading quantum dot technology in data communication lasers proven to have minimal temperature dependence and in lasers that operate in high-temperature environments over 200°C. The growable layers are comprised of InAs quantum dot, InGaAs quantum well, GaAs, or AlGaAs on GaAs substrate.