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 QLF1374 Series Quantum Dot-Wafer

dot-wafer-2

QD Laser, Inc. provides the most advanced quantum dot epitaxial wafers for a wide range of optoelectronic device applications. Our leading-edge quantum dot wafer technology  demonstrated in temperature-insensitive lasers for telecom/datacom and high-temperature operation up to 220°C for harsh environments is poured into the wafers.

• InAs multi-stacked quantum dot active layers sandwiched by GaAs/AlGaAs
   cladding layers on a 3-inch GaAs substrate
• Leading-edge highly-uniform, and high-density quantum dots for high optical gain
• Light emission wavelength of 1.21 to1.29 μm at room temperature
• Grown by multi-wafer molecular beam epitaxy system

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